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PH4530L Datasheet(PDF) 8 Page - NXP Semiconductors |
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PH4530L Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page 9397 750 14031 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 26 January 2005 8 of 12 Philips Semiconductors PH4530L N-channel TrenchMOS™ logic level FET Tj =25 °C and 150 °C; VGS =0V ID = 25 A; VDD =10V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 003aaa531 0 10 20 30 40 0.2 0.4 0.6 0.8 1 VSD (V) IS (A) Tj = 25 °C 150 °C 003aaa532 0 2 4 6 8 10 0 1020 3040 50 QG (nC) VGS (V) |
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