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MIP514 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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MIP514 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page Intelligent Power Devices (IPDs) 1 Publication date: April 2002 SLB00046AED MIP514 Silicon MOSFET type Integrated Circuit I Features • Built-in five protection functions (over-current, over-voltage, load- short-circuit, over heat, ESD) • Both DC and AC power suply are available I Applications • Lamp, solenoid drive • Motor drive I Absolute Maximum Ratings T a = 25°C ± 3°C Parameter Symbol Rating Unit Output voltage VDS − 0.5 to +45 V Output current IO 2.0 A Input voltage VIN − 0.5 to +6.0 V Input current IIN ±5mA Drain clamp energy endurance ECLP 28 mJ Power dissipation * PD 1.0 W Operating ambient temperature Topr −40 to +85 °C Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C I Block Diagram 6.9±0.1 2.5±0.1 0.45 1.05±0.05 2.5±0.5 123 2.5±0.5 +0.10 –0.05 0.45 +0.10 –0.05 (0.8) (4.0) (0.7) 0.65 max. Marking Symbol: MIP514 Unit: mm 1: In 2: Drain 3: Source MT-2-A1 Package Drain Source Over-voltage protection Load short-circuit protection Gate cut-off circuit ESD protection Over-heat protection In 1 2 3 Over-current protection Note) *: Mounting on the PCB (100 mm × 100 mm, glass epoxy substrate) (Ta = 25°C). |
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