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2SC5874S Datasheet(PDF) 2 Page - Rohm |
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2SC5874S Datasheet(HTML) 2 Page - Rohm |
2 / 4 page 2SC5874S Transistors 2/3 ! ! ! ! Electrical characteristics (Ta=25 °C) Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Turn-on time Storage time Fall time Parameter Symbol Min. Typ. Max. Unit Condition BVCEO BVCBO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Ton Tstg Tf IC =1mA IC =100µA IE =100µA VCB =20V VEB =4V IC =500mA IB =50mA VCE =2V IC =100mA VCE =10V IE = −100mA f =10MHz VCB =10V IE =0mA f =1MHz ∗1 ∗2 30 30 6 − − − 120 − − − − − − − − − − 150 − 250 10 30 120 35 − − − 1.0 1.0 300 390 − − − − − V V V µA µA mV − MHz pF ns ns ns IC =1.0A IB1 =100mA IB2 = −100mA VCC 25V ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits ! ! ! ! hFE RANK Q 120 −270 R 180 −390 ! ! ! ! Electrical characteristic curves 0.1 100 10 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 0.001 0.01 0.1 1 10 Fig.1 Safe Operating Area Single non repetitive Pulsed DC 100ms 10ms 1ms 0.01 10 1 0.1 10 100 1000 COLLECTOR CURRENT : IC (A) Fig.2 Switching Time Ta =25°C VCC =25V IC / IB =10 / 1 Tstg Tf Ton 0.001 10 1 0.1 0.01 1 10 100 1000 COLLECTOR CURRENT : IC (A) Fig.3 DC Current Gain vs. Collector Current ( Ι) Ta =100°C Ta =25°C Ta = −40°C VCE =2V 0.001 10 1 0.1 0.01 1 10 100 1000 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current ( ΙΙ) Ta =25°C VCE =5V VCE =3V VCE =2V 0.001 10 1 0.1 0.01 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) IC / IB =10 / 1 Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( Ι) Ta =100°C Ta =25°C Ta = −40°C 0.001 10 1 0.1 0.01 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Ta =25°C IC / IB =20 / 1 IC / IB =10 / 1 Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current ( ΙΙ) |
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