K1S321615M-E datasheet(9/12 Pages) SAMSUNG | 2Mx16 bit Uni-Transistor Random Access Memory

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K1S321615M-E Datasheet(PDF) 9 Page - Samsung semiconductor

Part #	K1S321615M-E

Description	2Mx16 bit Uni-Transistor Random Access Memory

Download	12 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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Revision 3.0

May 2001

K1S321615M

- 9 -

UtRAM

200

µs

Read Operation Twice

VCC

ZZ

CS

TIMING WAVEFORM OF POWER UP(1)

200

µs

VCC

ZZ

CS

TIMING WAVEFORM OF POWER UP(2)(No Dummy Cycle)

300

µs

Similar Part No. - K1S321615M-E

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Similar Description - K1S321615M-E

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K1S3216B1C	180Kb / 10P	2Mx16 bit Uni-Transistor Random Access Memory
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	K1S3216BCD	168Kb / 10P	2Mx16 bit Page Mode Uni-Transistor Random Access Memory
	K1S32161CC	185Kb / 10P	2Mx16 bit Page Mode Uni-Transistor Random Access Memory
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	K1S1616B1A	179Kb / 10P	1Mx16 bit Uni-Transistor Random Access Memory
	K1B6416B6C	768Kb / 46P	4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
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