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BAS716 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAS716 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2003 Nov 07 3 Philips Semiconductors Product specification Low-leakage diode BAS716 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Notes 1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions. 2. Soldering point of the cathode tab. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 1 mA 0.77 0.9 V IF = 10 mA 0.85 1 V IF = 50 mA 0.92 1.1 V IF = 150 mA 1.02 1.25 V IR reverse current VR = 75 V 0.2 5 nA VR = 75 V; Tj = 150 °C 3 80 nA VR = 100 V 0.3 − nA Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.6 2 − pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR =1mA 0.6 3 µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 450 K/W Rth j-s thermal resistance from junction to soldering point note 2 120 K/W |
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