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CY7C1046BV33
PRELIMINARY
Document #: 38-05170 Rev. **
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Data Retention Characteristics Over the Operating Range
Parameter
Description
Conditions[10]
Min.
Max
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
Com’lVCC = VDR = 2.0V,
CE > VCC – 0.3V
VIN > VCC – 0.3V or VIN < 0.3V
200
µA
tCDR
[3]
Chip Deselect to Data Retention Time
0
ns
tR
[9]
Operation Recovery Time
10
µs
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1[11, 12]
Read Cycle No. 2 (OE Controlled)[12, 13]
Notes:
9.
tr < 3 ns for the -10, -12, and -15 speeds.
10. No input may exceed VCC + 0.5V.
11. Device is continuously selected. OE, CE = VIL.
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
1046BV33–5
3.0V
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
1046BV33–6
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
V
CC
SUPPLY
CURRENT
1046BV33-7
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