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PTMB75B12C Datasheet(PDF) 3 Page - Nihon Inter Electronics Corporation |
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PTMB75B12C Datasheet(HTML) 3 Page - Nihon Inter Electronics Corporation |
3 / 3 page PTMB75B12C 0123 4 0 25 50 75 100 125 150 Forward Voltage VF (V) Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) TC=25℃ TC=125℃ 5 10 20 50 100 200 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Series Gate Impedance RG (Ω) Fig.7- Series Gate Impedance vs. Switching Time (Typical) tf tr ton toff VCC=600V IC=75A VGE=±15V TC=25℃ 0 400 800 1200 1600 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 Collector to Emitter Voltage V CE (V) Fig.10- Reverse Bias Safe Operating Area (Typical) RG=13Ω VGE=±15V TC≦125℃ 0 150 300 450 1 2 5 10 20 50 100 200 500 -di/dt (A/μs) Fig.9- Reverse Recovery Characteristics (Typical) IRrM trr IF=75A TC=25℃ 10 -5 10 -4 10 -3 10 -2 10 -1 110 2x10 -3 5x10 -3 -2 2x10 -2 5x10 -2 -1 2x10 -1 5x10 -1 1 2 5 Time t (s) fig11-Tansient Thermal Impedance Tc=25℃ 1 Shot Pulse IGBT FRD 1 1x10 1x10 |
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