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IL082 Datasheet(PDF) 3 Page - Integral Corp.

Part No. IL082
Description  Low Power J-FET DUAL OPERATIONAL AMPLIFIERS
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Maker  INTEGRAL [Integral Corp.]
Homepage  http://www.iksemi.com/
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IL082
ELECTRICAL CHARACTERISTICS
VCC = ± 15V, TAMB = 25°C (unless otherwise specified)
IL082
Symbol
ParametersI
Min.
Typ.
Max.
Unit
VIO
Input Offset Voltage (RS = 50Ω, V0=0)
Tamb =25°C
Tmin. ≤ Tamb. ≤ Tmax.
3
10
13
mV
DVIO
Input Offset Voltage Drift
18
μV/°C
IIO
Input Offset Current*
Tamb =25°C
Tmin. ≤ Tamb. ≤ Tmax.
5
100
10
pA
nA
IIB
Input Bias Current*
Tamb =25°C
Tmin. ≤ Tamb. ≤ Tmax.
65
400
20
pA
nA
AVD
Large Signal Voltage Gain (RL = 2kΩ, VO =± 10V)
Tamb =25°C
Tmin. ≤ Tamb. ≤ Tmax.
25
15
200
V/mV
SVR
Supply Voltage Rejection Ratio (RS = 50Ω, V0=0)
Tamb =25°C
Tmin. ≤ Tamb. ≤ Tmax.
70
70
86
dB
ICC
Supply Current (Per Amplifier)
Tamb =25°C
Tmin. ≤ Tamb. ≤ Tmax
1.4
2.5
2.5
mA
VICM
Input Common Mode Voltage Range
±11
+15
-12
V
CMR
Common Mode Rejection Ratio (RS = 50Ω, V0=0)
Tamb =25°C
70
86
dB
±V
OPP
Output Voltage Swing
RL=2 kΩ
Tamb =25°C
RL=10kΩ
Tmin. ≤ Tamb. ≤ Tmax.
RL=2kΩ
RL=10kΩ
10
12
10
12
12
13.5
V
SR
Slew Rate (Vi = 10V, RL= 2kΩ, CL = 100pF,
Tamb =25°C, unity gain)
8
13
V/
μs
tr
Rise Time (Vi = 20mV, RL= 2kΩ, CL =100pF,
Tamb =25°C, unity gain)
0.1
μs
KOV
Overshoot (Vi = 20mV, RL= 2kΩ, CL =100pF,
Tamb =25°C, unity gain)
20
%
GBP
Gain Bandwidth Product
3
MHz
RI
Input Resistance
10
12
Ω
THD
Total Harmonic Distortion (f=1kHz, RL= 2kΩ,
Tamb =25°C)
0.01
%
en
Equivalent input Noise Voltage
(RS = 100Ω, f = 1KHz)
18
nV
Hz
VO1/VO2
Channel Separation (AV =100)
120
dB
* The Input bias currents are junction leakage currents which approximately double for every 10
0C increase in the junction
temperature.




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