M12L64164A-7TG datasheet(4/44 Pages) ESMT

Part #	M12L64164A-7TG

Description	1M x 16 Bit x 4 Banks Synchronous DRAM

Download	44 Pages

Scroll/Zoom	100%

Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

Logo

4 / 44 page

ESMT

M12L64164A

Elite Semiconductor Memory Technology Inc.

Publication Date: Nov. 2005

Revision: 2.6

4/44

DC CHARACTERISTICS

Recommended operating condition unless otherwise noted，TA = 0 to 70

C

°

VERSION

PARAMETER

SYMBOL

TEST CONDITION

-5

-6

-7

UNIT

NOTE

Operating Current

(One Bank Active)

ICC1

Burst Length = 1, t RC

≥ t RC(min), IOL = 0 mA,

tcc = tcc(min)

100

85

mA

1,2

ICC2P

CKE

≤ VIL(max), tcc = tcc(min)

2

Precharge Standby Current

in power-down mode

ICC2PS

CKE & CLK

≤ VIL(max), tcc = ∞

1

mA

ICC2N

CKE

≥ VIH(min), CS

≤ VIH(min), tcc = tcc(min)

Input signals are changed one time during 2CLK

20

Precharge Standby Current

in non power-down mode

ICC2NS

CKE

≥ VIH(min), CLK

≤ VIL(max), tcc = ∞

input signals are stable

10

mA

ICC3P

CKE

≤ VIL(max), tcc = tcc(min)

10

Active Standby Current

in power-down mode

ICC3PS

CKE & CLK

≤ VIL(max), tcc = ∞

10

mA

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tcc = tcc(min)

Input signals are changed one time during 2CLK

30

mA

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3NS

CKE

≥ VIH(min), CLK

≤ VIL(max), tcc = ∞

input signals are stable

25

mA

Operating Current

(Burst Mode)

ICC4

IOL = 0 mA, Page Burst, All Bank active

Burst Length = 4, CAS Latency = 3

180

150

140

mA

1,2

Refresh Current

ICC5

tRC

≥ tRC(min), tCC = tcc(min)

180

150

140

mA

Self Refresh Current

ICC6

CKE

≤ 0.2V

1

mA

Note :

1. Measured with outputs open.

2. Input signals are changed one time during 2 CLKS.

Similar Part No. - M12L64164A-7TG

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M12L64164A-7TG	814Kb / 45P	1M x 16 Bit x 4 Banks Synchronous DRAM
	M12L64164A-7TG	1Mb / 45P	1M x 16 Bit x 4 Banks Synchronous DRAM
	M12L64164A-7TG2M	1Mb / 45P	1M x 16 Bit x 4 Banks
	M12L64164A-7TG2Y	1Mb / 45P	1M x 16 Bit x 4 Banks

More results

Similar Description - M12L64164A-7TG

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M52S128168A	1Mb / 47P	1M x 16 Bit x 4 Banks Synchronous DRAM
	M12S64164A	1Mb / 45P	1M x 16 Bit x 4 Banks Synchronous DRAM
	M12L64164A	814Kb / 45P	1M x 16 Bit x 4 Banks Synchronous DRAM
A-Data Technology	VDS6616A4A	608Kb / 8P	Synchronous DRAM(1M X 16 Bit X 4 Banks) Rev 1.1 April, 2001
AMIC Technology	A43L2616A	1Mb / 42P	1M X 16 Bit X 4 Banks Synchronous DRAM
Elite Semiconductor Mem...	M12L64164A	1Mb / 45P	1M x 16 Bit x 4 Banks Synchronous DRAM
Elite Semiconductor Mem...	M12L64164A	818Kb / 44P	1M x 16 Bit x 4 Banks Synchronous DRAM
AMIC Technology	A43L2616B	502Kb / 42P	1M X 16 Bit X 4 Banks Synchronous DRAM
Elite Semiconductor Mem...	M52L64164A	1Mb / 47P	1M x 16 Bit x 4 Banks Synchronous DRAM
	M12L64164A_0712	826Kb / 45P	1M x 16 Bit x 4 Banks Synchronous DRAM
	M52S64164A	1Mb / 47P	1M x 16 Bit x 4 Banks Synchronous DRAM

More results

M12L64164A-7TG Datasheet(PDF) 4 Page - Elite Semiconductor Memory Technology Inc.

M12L64164A-7TG Datasheet(HTML) 4 Page - Elite Semiconductor Memory Technology Inc.

Similar Part No. - M12L64164A-7TG

Similar Description - M12L64164A-7TG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44

Datasheet Download

Link URL