9397 750 15093

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 15 August 2005

2 of 12

Philips Semiconductors

PMWD22XN

Dual N-channel

µTrenchMOS extremely low level FET

3.

Ordering information

4.

Limiting values

[1]

Single device conducting.

Table 2:

Ordering information

Type number

Package

Name

Description

Version

PMWD22XN

TSSOP8

plastic thin shrink small outline package; 8 leads; body width 4.4 mm

SOT530-1

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage

25

°C ≤ T

-

20

V

drain-gate voltage (DC)

25

°C ≤ T

-20

V

gate-source voltage

-

±12

V

drain current

[1] -

9.2

A

[1] -

5.8

A

peak drain current

[1] -37

A

total power dissipation

[1] -

3.5

W

storage temperature

−55

+150

°C

junction temperature

−55

+150

°C

Source-drain diode

source current

[1] -

2.9

A

peak source current

[1] -

11.9

A