1

Transistor

2SB709A

Silicon PNP epitaxial planer type

For general amplification

Complementary to 2SD601A

q

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

JEDEC:TO–236

2:Emitter

EIAJ:SC–59

3:Collector

Mini Type Package

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

Symbol

Ratings

–45

–45

–7

–200

–100

200

150

–55 ~ +150

Unit

V

V

V

mA

mA

mW

˚C

˚C

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

*

Conditions

min

–45

–45

–7

160

typ

– 0.3

80

2.7

max

– 0.1

–100

460

– 0.5

Unit

µA

µA

V

V

V

V

MHz

pF

Rank

Q

R

S

160 ~ 260

210 ~ 340

290 ~ 460

Marking Symbol

BQ

BR

BS