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TD3165 Datasheet(PDF) 1 Page - Microsemi Corporation |
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TD3165 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 1 page 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MSC1048.PDF Updated: November 1998 TD3165 Electrical Characteristics @ 25oC Features • Very Thin Construction • Passivated mesa structure for very low leakage reverse currents • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, extremely low profile ceramic seal package • Diode assembly has matched thermal coefficient of expansion • Weldable / Solderable interconnects Applications • Designed for Solar Cell protection from plasma ESD • Extreme Temperature Cycling environments • Generically similar to product used on the International Space Station Alpha Solar Array Blocking Diode 200 Volts 10 Amps Screening • Temperature Cycling • High Temperature Reverse Bias • Power Burn-In • Electrical Cycling • Hermeticity Junction Temperature Range -100 to +175 oC Mechanical Outline Qualification • Humidity Testing • Thermal Cycling (20,000 cycles) • Bond Strength • Electrical Cycling • ESD SYMBOL CHARACTERISTIC CONDITIONS MAX UNITS IR Reverse (Leakage) Current VR = 180 Vdc 0.5 uAmps VF1 Forward Voltage IF = 0.1 A pulse test pw=300ms, d/c<2% 710 mVolts VF2 Forward Voltage IF = 0.5 A pulse test pw=300ms, d/c<2% 775 mVolts VF3 Forward Voltage IF = 2.0 A pulse test pw=300ms, d/c<2% 850 mVolts VF4 Forward Voltage IF = 5.0 A pulse test pw=300ms, d/c<2% 875 mVolts VF5 Forward Voltage IF = 10 A pulse test pw=300ms, d/c<2% 950 mVolts BVR Breakdown Voltage IR = 100 uA (min) 200 Volts |
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