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2SB1645 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # 2SB1645
Description  Silicon PNP triple diffusion planar type Darlington(For power amplification)
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SB1645 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Power Transistors
1
2SB1645
Silicon PNP triple diffusion planar type Darlington
For power amplification
I Features
• Satisfactory forward current transfer ratio h
FE characteristics
• Wide area of safe operation (ASO)
• Optimum for the output stage of a HiFi audio amplifier
I Absolute Maximum Ratings T
C = 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
−160
V
Collector to emitter voltage
VCEO
−160
V
Emitter to base voltage
VEBO
−5V
Peak collector current
ICP
−15
A
Collector current
IC
−8A
Collector power
TC = 25°CPC
100
W
dissipation
Ta
= 25°C3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
I Electrical Characteristics T
C = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB
= −160 V, I
E
= 0
−100
µA
ICEO
VCB
= −160 V, I
E
= 0
−100
µA
Emitter cutoff current
IEBO
VEB = −5 V, IC = 0
−100
µA
Collector to emitter voltage
VCEO
IC
= −10 mA, I
B
= 0
−160
V
Forward current transfer ratio
hFE1
VCE
= −5 V, I
C
= −1 A
500
hFE2 *
VCE = −5 V, IC = −7 A
3 500
15 000
Collector to emitter saturation voltage
VCE(sat)
IC
= −7 A, I
B
= −7 mA
−3V
Base to emitter saturation voltage
VBE(sat)
IC
= −7 A, I
B
= −7 mA
−3V
Transition frequency
fT
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC
= 7 A, I
B1
= −7 mA, I
B2
= 7 mA
1.0
µs
Storage time
tstg
VCC
= −50 V
1.5
µs
Fall time
tf
1.2
µs
Note) *: Rank classification
Rank
P
Q
hFE2
5 000 to 15 000 3 500 to 10 000
15.5±0.5
3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
5
°
5
°
5
°
5
°
5
°
10.9±0.5
1
5
°
23
φ 3.2±0.1
1: Base
2: Collector
3: Emitter
TOP-3E Package
Internal Connection
B
C
E


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