K7A803600A-16 datasheet(10/20 Pages) SAMSUNG

Part #	K7A803600A-16

Description	256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

Download	20 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

Logo

10 / 20 page

K7A801800A

256Kx36 & 512Kx18 Synchronous SRAM

- 10 -

Rev 1.0

July 2000

K7A803600A

DC ELECTRICAL CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0

°C to +70°C)

Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.

2. Data states are all zero.

3. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNIT

NOTES

Input Leakage Current(except ZZ)

IIL

VDD = Max ; VIN=VSS to VDD

-2

+2

µA

Output Leakage Current

IOL

Output Disabled, VOUT=VSS to VDDQ

-2

+2

µA

Operating Current

ICC

Device Selected, IOUT=0mA,

ZZ

≤VIL , Cycle Time ≥ tCYC Min

-16

-

420

mA

1,2

-15

-

410

-14

-

390

-10

-

350

Standby Current

ISB

Device deselected, IOUT=0mA,

ZZ

≤VIL, f=Max,

All Inputs

≤0.2V or ≥ VDD-0.2V

-16

-

160

mA

-15

-

150

-14

-

130

-10

-

120

ISB1

Device deselected, IOUT=0mA, ZZ

≤0.2V,

f = 0, All Inputs=fixed (VDD-0.2V or 0.2V)

-

100

mA

ISB2

Device deselected, IOUT=0mA, ZZ

≥VDD-0.2V,

f=Max, All Inputs

≤VIL or ≥VIH

-

50

mA

Output Low Voltage(3.3V I/O)

VOL

IOL=8.0mA

-

0.4

V

Output High Voltage(3.3V I/O)

VOH

IOH=-4.0mA

2.4

-

V

Output Low Voltage(2.5V I/O)

VOL

IOL=1.0mA

-

0.4

V

Output High Voltage(2.5V I/O)

VOH

IOH=-1.0mA

2.0

-

V

Input Low Voltage(3.3V I/O)

VIL

-0.3*

0.8

V

Input High Voltage(3.3V I/O)

VIH

2.0

VDD+0.5**

V

3

Input Low Voltage(2.5V I/O)

VIL

-0.3*

0.7

V

Input High Voltage(2.5V I/O)

VIH

1.7

VDD+0.5**

V

3

VSS

VIH

VSS-1.0V

20% tCYC(MIN)

(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70

°C)

TEST CONDITIONS

Parameter

Value

Input Pulse Level(for 3.3V I/O)

0 to 3.0V

Input Pulse Level(for 2.5V I/O)

0 to 2.5V

Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)

1.0V/ns

Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)

1.0V/ns

Input and Output Timing Reference Levels for 3.3V I/O

1.5V

Input and Output Timing Reference Levels for 2.5V I/O

VDDQ/2

Output Load

See Fig. 1

Similar Part No. - K7A803600A-16

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K7A803600B	401Kb / 18P	256Kx36 & 512Kx18 Synchronous SRAM
	K7A803600B	422Kb / 19P	256Kx36 & 512Kx18 Synchronous SRAM
	K7A803600B-QC14	400Kb / 18P	256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
	K7A803600B-QC16	400Kb / 18P	256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
	K7A803600B	422Kb / 19P	256Kx36 & 512Kx18 Synchronous SRAM

More results

Similar Description - K7A803600A-16

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K7A803609B	400Kb / 18P	256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
	DS_K7B803625B	439Kb / 19P	256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
	K7P803611B	256Kb / 13P	256Kx36 & 512Kx18 Synchronous Pipelined SRAM
	K7P803666B	216Kb / 13P	256Kx36 AND 512Kx18 Synchronous Pipelined SRAM
	K7A803600M	542Kb / 20P	256Kx36 & 512Kx18 Synchronous SRAM
	K7A803600B	422Kb / 19P	256Kx36 & 512Kx18 Synchronous SRAM
	KM718V987	574Kb / 21P	256Kx36 & 512Kx18 Synchronous SRAM
	K7A803609B	420Kb / 19P	256Kx36 & 512Kx18 Synchronous SRAM
	DS_K7N803645B	379Kb / 18P	256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
	DS_K7A803600B	401Kb / 18P	256Kx36 & 512Kx18 Synchronous SRAM

More results

K7A803600A-16 Datasheet(PDF) 10 Page - Samsung semiconductor

K7A803600A-16 Datasheet(HTML) 10 Page - Samsung semiconductor

Similar Part No. - K7A803600A-16

Similar Description - K7A803600A-16

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Datasheet Download

Link URL