IXFK24N120Q2 datasheet(1/2 Pages) IXYS

Part #	IXFK24N120Q2

Description	HiPerFET Power MOSFETs Q-Class

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

1200

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

1200

V

GS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C24

A

I

DM

T

C = 25°C, pulse width limited by TJM

96

A

I

AR

T

C = 25°C12

A

E

AR

T

C = 25°C30

mJ

E

AS

T

C = 25°C

4.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

20

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

830

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

TO-264

0.9/6 Nm/lb.in.

Weight

PLUS-247

6

g

TO-264

10

g

HiPerFETTM

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q

g

Low intrinsic R

g, low trr

Features

Double metal process for low gate

resistance

International standard packages

Epoxy meet UL 94 V-0, flammability

classification

Avalanche energy and current rated

Fast intrinsic Rectifier

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3mA

1200

V

GS(th)

V

DS = VGS, ID = 8 mA

2.5

5.0

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±200 nA

I

DSS

V

DS = VDSS

T

J =

25

°C50 µA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

0.65

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

G = Gate

D = Drain

S = Source

TAB = Drain

DS99185(05/04)

TO-264 AA (IXFK)

S

G

D

D (TAB)

V

DSS

= 1200 V

I

D25

=

24 A

R

DS(on) =

0.65

Ω

t

rr ≤

≤≤≤≤ 300 ns

IXFK 24N120Q2

IXFX 24N120Q2

PLUS 247TM (IXFX)

G

D

D (TAB)

Preliminary Data Sheet

Advance Technical Data

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