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K4E660411D-TC60 Datasheet(PDF) 3 Page - Samsung semiconductor |
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K4E660411D-TC60 Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 21 page CMOS DRAM K4E660411D, K4E640411D ABSOLUTE MAXIMUM RATINGS * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Rating Units Voltage on any pin relative to VSS VIN,VOUT -1.0 to +7.0 V Voltage on VCC supply relative to VSS VCC -1.0 to +7.0 V Storage Temperature Tstg -55 to +150 °C Power Dissipation PD 1 W Short Circuit Output Current IOS Address 50 mA RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70 °C) *1 : VCC+2.0V at pulse width ≤20ns which is measured at VCC *2 : -2.0 at pulse width ≤20ns which is measured at VSS Parameter Symbol Min Typ Max Units Supply Voltage VCC 4.5 5.0 5.5 V Ground VSS 0 0 0 V Input High Voltage VIH 2.6 - VCC+1.0*1 V Input Low Voltage VIL -1.0*2 - 0.7 V DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) Parameter Symbol Min Max Units Input Leakage Current (Any input 0 ≤VIN≤VCC+0.5V, all other pins not under test=0 Volt) II(L) -5 5 uA Output Leakage Current (Data out is disabled, 0V ≤VOUT≤VCC) IO(L) -5 5 uA Output High Voltage Level(IOH=-5mA) VOH 2.4 - V Output Low Voltage Level(IOL=4.2mA) VOL - 0.4 V |
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