K4E660411D-TC60 datasheet(3/21 Pages) SAMSUNG

Part #	K4E660411D-TC60

Description	16M x 4bit CMOS Dynamic RAM with Extended Data Out

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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CMOS DRAM

K4E660411D, K4E640411D

ABSOLUTE MAXIMUM RATINGS

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to

the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

Parameter

Symbol

Rating

Units

Voltage on any pin relative to VSS

VIN,VOUT

-1.0 to +7.0

V

Voltage on VCC supply relative to VSS

VCC

-1.0 to +7.0

V

Storage Temperature

Tstg

-55 to +150

°C

Power Dissipation

PD

1

W

Short Circuit Output Current

IOS Address

50

mA

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70

°C)

*1 : VCC+2.0V at pulse width

≤20ns which is measured at VCC

*2 : -2.0 at pulse width

≤20ns which is measured at VSS

Parameter

Symbol

Min

Typ

Max

Units

Supply Voltage

VCC

4.5

5.0

5.5

V

Ground

VSS

0

V

Input High Voltage

VIH

2.6

-

VCC+1.0*1

V

Input Low Voltage

VIL

-1.0*2

-

0.7

V

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

Parameter

Symbol

Min

Max

Units

Input Leakage Current (Any input 0

≤VIN≤VCC+0.5V,

all other pins not under test=0 Volt)

II(L)

-5

5

uA

Output Leakage Current

(Data out is disabled, 0V

≤VOUT≤VCC)

IO(L)

-5

5

uA

Output High Voltage Level(IOH=-5mA)

VOH

2.4

-

V

Output Low Voltage Level(IOL=4.2mA)

VOL

-

0.4

V

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K4E660411D-TC60 Datasheet(PDF) 3 Page - Samsung semiconductor

K4E660411D-TC60 Datasheet(HTML) 3 Page - Samsung semiconductor

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