PRELIMINARY
CY7C1313BV18
CY7C1911BV18
CY7C1311BV18
CY7C1315BV18
Document Number: 38-05620 Rev. **
Page 11 of 23
Maximum Ratings
(Above which the useful life may be impaired.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied .... –10°C to +85°C
Supply Voltage on VDD Relative to GND........ –0.5V to +2.9V
DC Applied to Outputs in High-Z .........–0.5V to VDDQ + 0.3V
DC Input Voltage[14] ............................ –0.5V to VDDQ + 0.3V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015)... >2001V
Latch-up Current..................................................... >200 mA
Operating Range
Range
Ambient
Temperature (TA)VDD
[15]
VDDQ
[15]
Com’l
0°C to +70°C
1.8 ± 0.1V
1.4V to VDD
DC Electrical Characteristics Over the Operating Range[11]
Parameter
Description
Test Conditions
Min.
Typ.
Max.
Unit
VDD
Power Supply Voltage
1.7
1.8
1.9
V
VDDQ
I/O Supply Voltage
1.4
1.5
VDD
V
VOH
Output HIGH Voltage
Note 12
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOL
Output LOW Voltage
Note 13
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH Voltage
IOH = −0.1 mA, Nominal Impedance
VDDQ – 0.2
VDDQ
V
VOL(LOW)
Output LOW Voltage
IOL = 0.1 mA, Nominal Impedance
VSS
0.2
V
VIH
Input HIGH Voltage[14]
VREF + 0.1
VDDQ + 0.3
V
VIL
Input LOW Voltage[14]
–0.3
VREF – 0.1
V
IX
Input Load Current
GND
≤ V
I ≤ VDDQ
−55
µA
IOZ
Output Leakage Current
GND
≤ V
I ≤ VDDQ, Output Disabled
−55
µA
VREF
Input Reference Voltage[16]
Typical Value = 0.75V
0.68
0.75
0.95
V
IDD
VDD Operating Supply
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
167 MHz
TBD
mA
200 MHz
TBD
mA
250 MHz
TBD
mA
ISB1
Automatic
Power-down
Current
Max. VDD, Both Ports
Deselected, VIN ≥ VIH or
VIN ≤ VIL
f = fMAX = 1/tCYC,
Inputs Static
167 MHz
TBD
mA
200 MHz
TBD
mA
250 MHz
TBD
mA
Notes:
11. All Voltage referenced to Ground.
12. Output are impedance controlled. IOH = −(VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
13. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
14. Overshoot: VIH(AC) < VDDQ + 0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −1.5V (Pulse width less than tCYC/2).
15. Power-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
16. VREF (Min.) = 0.68V or 0.46VDDQ, whichever is larger, VREF (Max.) = 0.95V or 0.54VDDQ, whichever is smaller.
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