1

Power Transistors

2SB1299

Silicon PNP epitaxial planar type

For power amplification

Complementary to 2SD1273

q

q

q

Full-pack package which can be installed to the heat sink with

one screw

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

–60

–60

–6

–6

–3

–1

40

2

150

–55 to +150

Unit

V

V

V

A

A

A

W

˚C

˚C

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Symbol

*

Conditions

min

–60

300

typ

30

max

–100

–100

–100

700

–1

Unit

µA

µA

µA

V

V

MHz

Ta=25

°C

Rank

Q

P

300 to 500

400 to 700

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1