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GVT71128D32T-6I Datasheet(PDF) 6 Page - List of Unclassifed Manufacturers

Part # GVT71128D32T-6I
Description  128K X 32 SYNCHRONOUS BURST SRAM
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ABSOLUTE MAXIMUM RATINGS*
Voltage on VCC Supply Relative to VSS........-0.5V to +4.6V
VIN ...........................................................-0.5V to VCC+0.5V
Storage Temperature (plastic) .........................-55oC to +150o
Junction Temperature .....................................................+150o
Power Dissipation ...........................................................1.0W
Short Circuit Output Current .........................................50mA
*Stresses greater than those listed uunder “Absolute Maximum
Ratings” may cause permanent damage to the device.This is a stress
rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
November 20, 1999
6
Galvantech, Inc. reserves the right to change products or specifications without notice.
Rev. 11/9 9
GVT71128D32
128K X 32 SYNCHRONOUS BURST SRAM
GALVANTECH,
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(
All Temperature Ranges; VCC = 3.3V -5 to +10% unless otherwise noted)
CAPACITANCE
THERMAL CONSIDERATIO N
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Data Inputs (DQxx)
VIHD
2.0
VCCQ+0.3
V
1,2
All Other Inputs
VIH
2.0
4.6
V
1,2
Input Low (Logic 0) Voltage
V Il
-0.3
0.8
V
1, 2
Input Leakage Current
0V < VIN < VCC
ILI
-2
2
uA
14
Output Leakage Current
Output(s) disabled,
0V < VOUT < VCC
ILO
-2
2
uA
Output High Voltage
IOH = -4.0mA
VOH
2.4
V
1, 11
Output Low Voltage
IOL = 8.0mA
VOL
0.4
V
1, 11
Supply Voltage
VCC
3.1
3.6
V
1
I/O Supply Voltage (3.3V I/O)
VCC Q
3.1
3.6
V
1
I/O Supply Voltage (2.5V I/O)
VCC Q
2.375
VCC
V
1
DESCRIPTION
CONDITIONS
SYM
TYP
-4
-5
-6
-7
UNITS NOTES
Power Supply
Current: Operating
Device selected; all inputs < VILor >
VIH ;cycle time >
tKC MIN; VCC =MAX;
outputs open
Icc
80
225
225
185
120
mA
3, 12,
13
CMOS Standby
TTL Standby
Clock Runnin g
Device deselected; VCC = MAX;
all inputs < VSS +0.2 or >VCC -0.2;
all inputs static; CLK frequency = 0
ISB2
0.2
2
2
2
2
mA
12,13
Device deselected; all inputs < VIL
or > VIH; all inputs static;
VCC = MAX; CLK frequency = 0
ISB3
8
18
18
18
18
mA
12,13
Device deselected;
all inputs < VIL or > VIH ; VCC = MAX;
CLK cycle time >
t KC MIN
ISB4
12
30
30
25
20
mA
12,13
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
NOTES
Input Capacitance
TA = 25
oC; f = 1 MHz
VCC = 3.3V
CI
3
4
pF
4
Input/Output Capacitance (DQ)
CO
6
7
pF
4
DESCRIPTION
CONDITIONS
SYMBOL
TQFP TYP
UNITS
NOTES
Thermal Resistance - Junction to Ambient
Still air, soldered on 4.25 x
1.125 inch 4-layer PCB
Θ
J A
20
oC/W
Thermal Resistance - Junction to Case
Θ
JC
1
oC/W


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