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TIC216 SERIES
SILICON TRIACS
2
PRODU CT
INFORMA TION
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
VGT
Gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
2.2
-2.2
-2.2
3
V
VT
On-state voltage
IT = ±8.4 A
IG = 50 mA
(see Note 5)
±1.7
V
IH
Holding current
Vsupply = +12 V†
Vsupply = -12 V†
IG = 0
IG = 0
Init’ ITM = 100 mA
Init’ ITM = -100 mA
30
-30
mA
IL
Latching current
Vsupply = +12 V†
Vsupply = -12 V†
(see Note 6)
4
-2
mA
dv/dt
Critical rate of rise of
off-state voltage
VDRM = Rated VDRM
IG = 0
TC = 110°C
±20
V/µs
dv/dt(c)
Critical rise of
commutation voltage
VDRM = Rated VDRM
ITRM = ±8.4 A
TC = 70°C
±2
±5
V/µs
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
2.5
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT