NST3904DXV6T5 datasheet(1/8 Pages) ONSEMI

Part #	NST3904DXV6T5

Description	Dual General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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March, 2003 - Rev. 0

1

Publication Order Number:

NST3904DXV6T1/D

NST3904DXV6T1,

NST3904DXV6T5

Dual General Purpose

Transistor

The NST3904DXV6T1 device is a spin- off of our popular

SOT-23/SOT-323 three-leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT- 563

six-leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low-power surface mount

applications where board space is at a premium.

• h

FE, 100-300

• Low V

CE(sat), ≤ 0.4 V

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Lead-Free Solder Plating

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector - Emitter Voltage

VCEO

40

Vdc

Collector - Base Voltage

VCBO

60

Vdc

Emitter - Base Voltage

VEBO

6.0

Vdc

Collector Current - Continuous

IC

200

mAdc

Electrostatic Discharge

ESD

HBM>16000,

MM>2000

V

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25

°C

PD

357

(Note 1)

2.9

(Note 1)

mW

mW/

°C

Thermal Resistance

Junction-to-Ambient

RqJA

350

(Note 1)

°C/W

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25

°C

PD

500

(Note 1)

4.0

(Note 1)

mW

mW/

°C

Thermal Resistance

Junction-to-Ambient

RqJA

250

(Note 1)

°C/W

Junction and Storage

Temperature Range

TJ, Tstg

- 55 to +150

°C

1. FR-4 @ Minimum Pad

SOT-563

CASE 463A

PLASTIC

1

2

3

6

5 4

Q1

(1)

(2)

(3)

(4)

(5)

(6)

Q2

NST3946DXV6T1

ORDERING INFORMATION

http://onsemi.com

MA = Specific Device Code

D

= Date Code

MARKING DIAGRAM

MA D

Device

Package

Shipping

NST3904DXV6T1

SOT-563

4 mm pitch

4000/Tape & Reel

NST3904DXV6T5

SOT-563

2 mm pitch

8000/Tape & Reel

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