Electronic Components Datasheet Search
Selected language     English  ▼
Part Name
         Description


2PG402 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. 2PG402
Description  Insulated Gate Bipolar Transistor
Download  2 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
Logo 

   
 1 page
background image
1
IGBTs
unit: mm
2PG402
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: V
CES = 400V
q Allowing to control large current: I
C(peak) = 130A
q Housed in the surface mounting package
s Applications
q For flash-light for use in a camera
1: Emitter
2: Collector
3: Gate
U Type Package
s Absolute Maximum Ratings (T
C = 25°C)
Parameter
Collector to emitter voltage
Gate to emitter voltage
Collector current
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
VCES
VGES
IC
ICP
PC
Tch
Tstg
Ratings
400
±8
5
130
10
1
150
−55 to +150
Unit
V
V
A
A
W
°C
°C
s Electrical Characteristics (T
C = 25°C)
Parameter
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
ICES
IGES
VCES
VGE(th)
VCE(sat)
Cies
td(on)
tr
td(off)
tf
Conditions
VCE = 320V, VGE = 0
VGE = ±8V, VCE = 0
IC = 1mA, VGE = 0
VCE = 10V, IC = 1mA
VGE = 5V, IC = 5A
VGE = 5V, IC = 130A
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V, IC = 130A
VGE = 5V, Rg = 25Ω
min
400
0.5
typ
1930
130
1.4
350
1.5
max
10
±1
1.5
2
10
Unit
µA
µA
V
V
V
pF
ns
µs
ns
µs
6.5
±0.1
5.3
±0.1
4.35
±0.1
3.0
±0.1
0.85
±0.1
1
4.6
±0.1
0.75
±0.1
0.5
±0.1
Marking
0.05 to 0.15
1.0
±0.1
23




Html Pages

1  2 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
MGS13002DInsulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate 1 2 3 4 5 MoreMotorola, Inc
NTE3300Insulated Gate Bipolar Transistor N-Channel Enhancement Mode High Speed Switch 1 2 NTE Electronics
MGP4N60EInsulated Gate Bipolar Transistor 1 2 3 4 5 ON Semiconductor
BUK866-400IZInsulated Gate Bipolar Transistor Protected Logic-Level IGBT 1 2 3 4 5 MoreNXP Semiconductors
IRG4PC30KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Vces=600V Vce on typ.=2.21V @Vge=15V Ic=16A 1 2 3 4 5 MoreInternational Rectifier
IRG4PC50KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Vces=600V Vce on typ.=1.84V @Vge=15V Ic=30A 1 2 3 4 5 MoreInternational Rectifier
IRGB420UD2INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY Vces=500V @Vge=15V Ic=7.5A 1 2 3 4 5 MoreInternational Rectifier
IRGPH50MD2INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY Vces=1200V @Vge=15V Ic=23A 1 2 3 4 5 MoreInternational Rectifier
GT15J121Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT 1 2 Toshiba Semiconductor
IRG4IBC30KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 1 2 3 4 5 MoreInternational Rectifier

Link URL

Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Bookmark   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl