K4M56323LE - M(E)E/N/S/C/L/R

February 2004

Mobile-SDRAM

• 2.5V power supply.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25

°C ~ 70°C).

• Extended Temperature Operation (-25

°C ~ 85°C).

• 2Chips DDP 90Balls FBGA with 0.8mm ball pitch

( -MXXX : Leaded, -EXXX : Lead Free).

FEATURES

The K4M56323LE is 268,435,456 bits synchronous high data

rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

GENERAL DESCRIPTION

ORDERING INFORMATION

- M(E)E/N/S : Normal / Low / Super Low Power, Extended Temperature(-25

°C ~ 85°C)

- M(E)C/L/R : Normal / Low / Super Low Power, Commercial Temperature(-25

°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic

DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations or desk top

computers for the first three years of five year term of this license. Nothing herein limits the rights of Samsung to use Multi-Die Plastic DRAM in other

products or other applications under paragrangh such as mobile, telecom or non-computer application(which include by way of example laptop or

notebook computers, cell phones, televisions or visual monitors)

Violation may subject the customer to legal claims and also excludes any warranty against infringement from Samsung." .

3. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Part No.

Max Freq.

Interface

Package

K4M56323LE-M(E)E/N/S/C/L/R80

125MHz(CL=3)

LVCMOS

90 FBGA

Leaded (Lead Free)

K4M56323LE-M(E)E/N/S/C/L/R1H

105MHz(CL=2)

K4M56323LE-M(E)E/N/S/C/L/R1L

2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA