STS2621 datasheet(2/7 Pages) SAMHOP

Part #	STS2621

Description	Dual P -Channel Enhancement Mode Field Effect Transistor

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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E LE CTR ICAL CHAR ACTE R IS TICS (TA 25 C unless otherwise noted)

=

Parameter

Symbol

Condition

Min Typ Max Unit

OFF CHAR ACTER ISTICS

Drain-Source Breakdown Voltage

BVDSS

=

VGS 0V, ID -250uA

=

-20

V

Zero Gate Voltage Drain Current

IDSS

VDS -16V, VGS 0V

=

1

uA

Gate-Body Leakage

IGSS

VGS

10V, VDS 0V

=

100 nA

ON CHAR ACTER ISTICS b

Gate Threshold Voltage

VGS(th)

VDS VGS, ID =-250uA

=

-0.5

-1.5

V

Drain-Source On-State R esistance

R DS(ON)

VGS -4.5V, ID -2.0A

VGS -2.5V, ID -1.0A

On-State Drain Current

ID(ON)

VDS = -5V, VGS = -4.5V

A

S

Forward Transconductance

FS

g

VDS -5V, ID

DYNAMIC CHAR ACTER ISTICS

c

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

R everse Transfer Capacitance

VDS = -20V, VGS = 0V

f =1.0MHZ

P

F

P

F

P

F

SWITCHING CHAR ACTER ISTICS

c

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

tf

VDD = -10V,

ID = -1A,

VGS = -4.5V,

R GEN = 6 ohm

ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

Qgd

VDS = -10V, ID = -2A,

VGS = -4.5V

nC

C

Fall Time

=

2

m-ohm

-5

= -2A

6

130

190

S T S 2621

295

63

52

11.5

15.6

83.1

43.6

3.5

0.9

1.1

-0.8

115

175

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