Preliminary
Product Description
Broomfield, CO 80021
1
EDS-103980 Rev C
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
SPB-3018
SPB-3018Z
400 - 2500 MHz 1W Medium Power
Active Bias InGaP/GaAs HBT Amplifier
Product Features
• Available in Lead Free, RoHS compliant, & Green packaging
• Efficient Class AB operation
• P1dB = 30 dBm @ 1960MHz
• High Linearity/ACP performance
• MSL 1 moisture rating
• Power shutdown using V
PC
(less than 5uA I
DQ
)
Applications
• W-CDMA, PCS, Cellular Systems
• Multi-Carrier Applications
Pb
RoHS Compliant
&
Package
Green
The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar
Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip
Class AB bias circuit which provides excellent efficiency while maintain-
ing good linearity. The on-chip bias also allows the device output power
(and current) to drive up towards saturation as the input power in-
creases. The SPB-3018 is an ideal choice for multi-carrier as well as
digital wireless telecom or general wireless applications in the 400-2500
MHz range.
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
880 MHz
30
1960 MHz
30
2140 MHz
30
880 MHz
18
1960 MHz
12
13.5
15
2140 MHz
13
880 MHz
1.3:1
1960 MHz
1.2:1
2140 MHz
1.3:1
Channel Power
880 MHz
21.5
IS-95 at 880/1960MHz, -55dBc ACP
1960 MHz
22
WCDMA at 2140MHz, -50dBc ACP
2140 MHz
21
880 MHz
5
1960 MHz
4
2140 MHz
4
VD
Device Operating Voltage
V
4.75
5
5.25
IDQ
Device Quiescent Current
mA
180
220
260
RTH, j-l
Thermal Resistance (junction - lead)
°C/W
30
*Device operating current at P1dB ramps up to approximately 420mA @880MHz, 410mA @1960MHz and 370mA @2140MHz
S21
Small Signal Gain
S11
Input VSWR
dBm
ACP
NF
Noise Figure
dB
Test Conditions:
Ta = 25°C
ZO = 50 Ohms
P1dB
Output Power at 1 dB Compression
*
dBm
dBm
Typical ACP (IS-95) & Efficiency @ 1960MHz
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
15
16
17
18
19
20
21
22
23
24
Channel Power (dBm)
0
2.5
5
7.5
10
12.5
15
17.5
20
22.5
ACP 25C
Eff. 25C
