VVZB120-12IO1 datasheet(1/3 Pages) IXYS

Part #	VVZB120-12IO1

Description	Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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V

CES

T

VJ

= 25°C to 150°C

1200

V

GE

Continuous

± 20

V

I

C25

T

case = 25°C, DC

78

A

I

C80

T

case = 80°C, DC

52

A

I

CM

t

p

= Pulse width limited by T

VJM

140

A

P

tot

T

case = 80°C

222

W

V

RRM

1200

V

I

F(AV)

T

case = 80°C, rectangular d = 0.5

27

A

I

F(RMS)

T

case = 80°C, rectangular d = 0.5

38

A

I

FRM

T

case = 80°C, tP = 10 µs, f = 5 kHz

tbd

A

I

FSM

T

VJ

= 45°C, t = 10 ms

200

A

T

VJ

= 150°C, t = 10 ms

180

A

P

tot

T

case = 80°C

64

W

Symbol

Conditions

Maximum Ratings

I

dAV

T

case= 80°C, sinusoidal 120°

120

A

I

FRMS/ITRMS

T

case= 80°C, per leg

77

A

I

FSM/ITSM

T

VJ

= 25°C, t = 10 ms, V

R = 0 V

750

A

T

VJ

= 150°C, t = 10 ms, V

R = 0 V

670

A

I2t

T

VJ

= 25°C, t = 10 ms, V

R = 0 V

2810

A

T

VJ

= 150°C, t = 10 ms, V

R = 0V

2240

A

(di/dt)

cr

T

VJ = TVJM

repetitive, I

T = 150 A

150

A/µs

f = 50 Hz, t

P = 200 µs

V

D =

2/

3 VDRM

I

G = 0.45 A,

non repetitive, I

T = Id(AV)/3

500

A/µs

di

G/dt = 0.45 A/µs

(dv/dt)

cr

T

VJ = TVJM; VDR =

2/

3 VDRM

1000

V/µs

R

GK =

¥; method 1 (linear voltage rise)

P

GM

T

VJ = TVJM

t

P =30 µs

10

W

I

T

= I

d(AV)/3

t

P = 300 µs

5

W

t

P =10 ms

1

W

P

GAVM

0.5

W

V

RRM

Type

V

1200

VVZB 120-12 io1

1400

VVZB 120-14 io1

1600

VVZB 120-16 io1

Features

• Soldering connections for PCB

mounting

• Isolation voltage 3600 V~

• Ultrafast freewheel diode

• Convenient package outline

Applications

• Drive Inverters with brake system

Advantages

• 2 functions in one package

• No external isolation

• Easy to mount with two screws

• Suitable for wave soldering

• High temperature and power cycling

capability

VVZB 120

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions.

V

RRM = 1200-1600 V

I

dAV

= 120 A

Three Phase Half Controlled

Rectifier Bridge

with IGBT and Fast Recovery Diode

for Braking System

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VVZB120-12IO1 Datasheet(PDF) 1 Page - IXYS Corporation

VVZB120-12IO1 Datasheet(HTML) 1 Page - IXYS Corporation

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