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SSM6P05FU Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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SSM6P05FU Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page SSM6P05FU 2002-01-17 3 (Q1, Q2 common) Drain-Source voltage VDS (V) ID – VDS Gate-Source voltage VGS (V) ID – VGS Drain current ID (mA) RDS (ON) – ID Gate-Source voltage VGS (V) RDS (ON) – VGS Ambient temperature Ta (°C) RDS (ON) – Ta Drain current ID (mA) ïYfsï – ID 0 0 -0.5 -1.0 -1.5 -2.0 -100 -200 -300 -400 -500 Common Source Ta = 25°C VGS = -1.5 V -1.7 -1.9 -2.1 -2.3 -2.5 -3 -4 -10 0 0 -100 -200 -300 -400 -500 1 2 3 4 5 6 Common Source Ta = 25°C VGS = -4 V -2.5 V 0 0 -2 -4 -6 -8 -10 1 2 3 4 5 6 Common Source ID = -50 mA Ta = 100°C 25°C -25°C 0 -25 0 25 50 75 100 125 150 1 2 3 4 5 6 Common Source VGS = -4 V, ID = -100 mA -2.5 V, -50 mA 30 -10 -30 -50 -100 -300 -500 -1000 50 100 300 500 1000 Common Source VDS = -3 V Ta = 25°C -0.01 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -0.1 -1 -10 -100 -1000 Common Source VDS = -3 V Ta = 100°C -25°C 25°C |
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