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MC100EP57DTR2G Datasheet(PDF) 6 Page - ON Semiconductor |
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MC100EP57DTR2G Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 10 page MC10EP57, MC100EP57 http://onsemi.com 6 Table 10. 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = −5.5 V to −3.0 V (Note 17) −40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 40 52 65 40 52 65 40 52 65 mA VOH Output HIGH Voltage (Note 18) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 18) −1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695 mV VIH Input HIGH Voltage (Single−Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single−Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV VBB Output Voltage Reference −1525 −1425 −1325 −1525 −1425 −1325 −1525 −1425 −1325 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 19) VEE+2.0 0.0 VEE+2.0 0.0 VEE+2.0 0.0 V IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 17. Input and output parameters vary 1:1 with VCC. 18. All loading with 50 W to VCC − 2.0 V. 19. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Table 11. AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 20) −40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit fmax Maximum Frequency (See Figure 2. Fmax/JITTER) > 3 > 3 > 3 GHz tPLH, tPHL Propagation Delay to Output Differential D to Q, Q COM_SEL, SEL to Q, Q 250 300 350 400 450 500 275 320 375 420 475 520 320 320 420 450 520 575 ps tSKEW Device to Device Skew (Note 21) 200 200 200 ps tJITTER Cycle−to−Cycle Jitter (See Figure 2. Fmax/JITTER) 0.2 < 1 0.2 < 1 0.2 < 1 ps VPP Input Voltage Swing (Differential Configuration) 150 800 1200 150 800 1200 150 800 1200 mV tr tf Output Rise/Fall Times Q, Q (20% − 80%) 70 120 170 70 140 200 70 150 220 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 20. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V. 21. Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays are measured from the cross point of the inputs to the cross point of the outputs. |
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