MEK350-02DA datasheet(1/2 Pages) IXYS

Part #	MEK350-02DA

Description	Fast Recovery Epitaxial Diode (FRED) Module

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Features

q

International standard package

with DCB ceramic base plate

q

Planar passivated chips

q

Short recovery time

q

Low switching losses

q

Soft recovery behaviour

q

Isolation voltage 3600 V~

q

UL registered E 72873

Applications

q

Antiparallel diode for high frequency

switching devices

q

Free wheeling diode in converters

and motor control circuits

q

Inductive heating and melting

q

Uninterruptible power supplies (UPS)

q

Ultrasonic cleaners and welders

Advantages

q

High reliability circuit operation

q

Low voltage peaks for reduced

protection circuits

q

Low noise switching

q

Low losses

Dimensions in mm (1 mm = 0.0394")

0.53

1.29

75

503

75

356

1800

3000

3600

-40...+150

-40...+125

110

28800

29300

23300

23800

2400

2640

2160

2380

150

12.7

9.6

50

2.25-2.75/20-25

4.50-5.50/40-48

150

0.80

0.98

260

0.92

1.07

0.228

0.143

3

2

80

x I

FAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

300

150

200

100

9

200

15

875

12

3

V

RSM

V

RRM

Type

V

200

MEK 350-02DA

Symbol

Test Conditions

Maximum Ratings

I

FRMS

T

C

=

°CA

I

FAVM ÿÿ

x

T

C

=

°C; rectangular, d = 0.5

A

I

FRM

t

P < 10 ms; rep. rating, pulse width limited by TVJM

A

I

FSM

T

VJ = 45°C;

t = 10 ms (50 Hz), sine

A

t = 8.3 ms (60 Hz), sine

A

T

VJ = 150°C;

t = 10 ms (50 Hz), sine

A

t = 8.3 ms (60 Hz), sine

A

I2t

T

VJ = 45°C;

t = 10 ms (50 Hz), sine

A2s

t = 8.3 ms (60 Hz), sine

A2s

T

VJ = 150°C;

t = 10 ms (50 Hz), sine

A2s

t = 8.3 ms (60 Hz), sine

A2s

T

VJ

°C

T

stg

°C

T

Smax

°C

P

tot

T

C = 25°CW

V

ISOL

50/60 Hz, RMS t = 1 min

V~

I

ISOL £ 1 mA

t = 1 s

V~

M

d

Mounting torque (M6)

Nm/lb.in.

Terminal connection torque (M6)

Nm/lb.in.

d

S

Creeping distance on surface

mm

d

A

Strike distance through air

mm

a

Maximum allowable acceleration

m/s2

Weight

g

Symbol

Test Conditions

Characteristic Values (per diode)

typ.

max.

I

R

T

VJ = 25°CVR

= V

RRM

mA

T

VJ = 25°CVR

= 0.8 • V

RRM

mA

T

VJ = 125°CVR

= 0.8 • V

RRM

mA

V

F

I

F =

A;

T

VJ = 125°CV

T

VJ =25°CV

I

F =

A;

T

VJ = 125°CV

T

VJ =25°CV

V

T0

For power-loss calculations only

V

r

T

m

W

R

thJH

DC current

K/W

R

thJC

DC current

K/W

t

rr

I

F

=

A

T

VJ = 100°Cns

I

RM

V

R=

V

T

VJ =

25

°CA

-di/dt =

A/

msT

VJ = 100°CA

Fast Recovery

Epitaxial Diode

(FRED) Module

MEK 350-02 DA

V

RRM = 200 V

I

FAVM

= 356 A

t

rr

= 150 ns

1

2

3

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