MUN5237T1 datasheet(3/10 Pages) ONSEMI

Part #	MUN5237T1

Description	NPN SILICON BIAS RESISTOR TRANSISTORS

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5211T1 Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

MUN5211T1

(VEB = 6.0 V, IC = 0)

MUN5212T1

MUN5213T1

MUN5214T1

MUN5215T1

MUN5216T1

MUN5230T1

MUN5231T1

MUN5232T1

MUN5233T1

MUN5234T1

MUN5235T1

MUN5236T1

MUN5237T1

IEBO

−

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

0.05

0.13

mAdc

Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 4)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS (Note 4)

DC Current Gain

MUN5211T1

(VCE = 10 V, IC = 5.0 mA)

MUN5212T1

MUN5213T1

MUN5214T1

MUN5215T1

MUN5216T1

MUN5230T1

MUN5231T1

MUN5232T1

MUN5233T1

MUN5234T1

MUN5235T1

MUN5236T1

MUN5237T1

hFE

35

60

80

160

3.0

8.0

15

80

60

100

140

350

5.0

15

30

200

150

140

150

140

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

(IC = 10 mA, IB = 5 mA)

MUN5230T1/MUN5231T1

(IC = 10 mA, IB = 1 mA)

MUN5215T1/MUN5216T1/

MUN5232T1/MUN5233T1/MUN5234T1

VCE(sat)

−

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

MUN5211T1

MUN5212T1

MUN5214T1

MUN5215T1

MUN5216T1

MUN5230T1

MUN5231T1

MUN5232T1

MUN5233T1

MUN5234T1

MUN5235T1

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

MUN5213T1

(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)

MUN5236T1

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)

MUN5237T1

VOL

−

0.2

Vdc

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

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