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IXTH10N100 Datasheet(PDF) 4 Page - IXYS Corporation

Part # IXTH10N100
Description  MegaMOS FET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH10N100 Datasheet(HTML) 4 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
IXTH10N100
IXTH12N100
IXTM10N100
IXTM12N100
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
V
DS - Volts
1
10
100
1000
0.1
1
10
Gate Charge - nCoulombs
0
255075
100
125
150
0
1
2
3
4
5
6
7
8
9
10
V
SD - Volts
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
12
14
16
18
20
V
DS - Volts
0
5
10
15
20
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
D=0.5
C
rss
C
oss
10µs
100µs
1ms
10ms
100ms
C
iss
Limited by R
DS(on)
V
DS = 500V
I
D = 6A
I
G = 10mA
Single Pulse
f = 1MHz
V
DS = 25V
T
J = 125°C
T
J = 25°C
D=0.2
D=0.1
D=0.05
D=0.01
D=0.02


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