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IXTH12N50A Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTH12N50A Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 4 page IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 I XYS reserves the right to change limits, test conditions, and dimensions. Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 500 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 500 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C12 A I DM T C = 25 °C, pulse width limited by T JM 48 A P D T C = 25 °C 180 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s TO-247 AD (IXTH) Standard Power MOSFET N-Channel Enhancement Mode V DSS I D25 R DS(on) IXTH 12 N50A 500 V 12 A 0.4 Ω Ω Ω Ω Ω IXTM 12 N50A 500 V 12 A 0.4 Ω Ω Ω Ω Ω G = Gate, D = Drain, S = Source, TAB = Drain D G TO-204 AA (IXTM) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, I D = 250 µA 500 V V GS(th) V DS = VGS, ID = 250 µA2 4 V I GSS V GS = ±20 V DC, VDS = 0 ±100 nA I DSS V DS = 0.8 • VDSS T J = 25°C 200 µA V GS = 0 V T J = 125°C1 mA R DS(on) V GS = 10 V, I D = 0.5 ID25 0.40 Ω Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Features q International standard packages q Low R DS (on) HDMOS TM process q Rugged polysilicon gate cell structure q Low package inductance (< 5 nH) - easy to drive and to protect q Fast switching times Applications q Switch-mode and resonant-mode power supplies q Motor controls q Uninterruptible Power Supplies (UPS) q DC choppers Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) q Space savings q High power density 91541E(5/96) D (TAB) |
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