IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: 408-982-0700, Fax: 408-496-0670

0

1020

3040

50

0

2

4

6

8

10

12

14

Fig. 13

Typ. turn-off energy per pulse

I

I

I

mJ

R

Goff

E

off

0

10

203040

50

0

2

4

6

8

10

Fig. 12

Typ. turn-on energy per pulse

I

I

12.5

25

37.5

50

65,5

I

0

I

RM

A

R

Gon

mJ

E

on

0.0001

0.001

0.01

0.1

1

10

0.01

0.1

1

Fig. 15

Transient thermal resistance junction to case of IGBT and Diode

t

Diode

IGBT

Z

thJC

K/W

s

0

25

50

75

100

125

150

0

2

4

6

8

10

12

14

Fig. 11

Typ. turn-off energy per pulse

I

I

I

°C

mJ

E

off

T

J

0

25

50

75

100

125

150

0

2

4

6

8

10

Fig. 10

Typ. turn-on energy per pulse

I

I

I

40

50

A

I

RM

20

0

10

mJ

°C

T

J

30

E

on

Single pulse

I

RM

I

RM

I

RM

I

RM

I

RM

I

RM

IXSN 35N100U1

Fig. 14

Forward characteristic of

reverse diode