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IXSH25N100 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXSH25N100 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXSH 25N100 IXSM 25N100 IXSH 25N100A IXSM 25N100A TO-247 AD Outline Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs I C = I C90; VCE = 10 V, 10 17 S Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I C(on) V GE = 15 V, VCE = 10 V 140 A C ies 2850 pF C oes V CE = 25 V, VGE = 0 V, f = 1 MHz 210 pF C res 50 pF Q g 112 130 nC Q ge I C = IC90, VGE = 15 V, VCE = 0.5 VCES 28 40 nC Q gc 50 75 nC t d(on) 70 ns t ri 580 ns t d(off) 150 ns t fi 25N100 1200 ns 25N100A 800 ns E off 25N100 10 mJ 25N100A 8 mJ t d(on) 70 ns t ri 580 ns E on 4.2 mJ t d(off) 200 550 ns t fi 25N100 1500 3000 ns 25N100A 1000 1500 ns E off 25N100 15 mJ 25N100A 11 mJ R thJC 0.63 K/W R thCK 0.25 K/W TO-204AE Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector 1 = Gate 2 = Emitter Case = Collector Inductive load, T J = 125 °°°°°C I C = IC90, VGE = 15 V, L = 100 µH V CE = 0.8 VCES, R G = 4.7 Ω Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher T J or increased RG Inductive load, T J = 25° °°°°C I C = IC90, VGE = 15 V, L = 100 µH V CE = 0.8 VCES, RG = 4.7 Ω Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher T J or increased RG IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
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