IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: 408-982-0700, Fax: 408-496-0670

IXSH 25N100

IXSM 25N100

IXSH 25N100A IXSM 25N100A

TO-247 AD Outline

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

10

17

S

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

I

C(on)

V

140

A

C

ies

2850

pF

C

oes

V

210

pF

C

res

50

pF

Q

g

112

130

nC

Q

ge

I

28

40

nC

Q

gc

50

75

nC

t

d(on)

70

ns

t

ri

580

ns

t

d(off)

150

ns

t

fi

25N100

1200

ns

25N100A

800

ns

E

off

25N100

10

mJ

25N100A

8

mJ

t

d(on)

70

ns

t

ri

580

ns

E

on

4.2

mJ

t

d(off)

200

550

ns

t

fi

25N100

1500

3000

ns

25N100A

1000

1500

ns

E

off

25N100

15

mJ

25N100A

11

mJ

R

thJC

0.63 K/W

R

thCK

0.25

K/W

TO-204AE Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

1 = Gate

2 = Emitter

Case = Collector

Inductive load, T

125

°°°°°C

I

L = 100

µH

V

R

Remarks: Switching times

may increase for

V

higher T

Inductive load, T

°°°°C

I

V

Remarks: Switching times

may increase for

V

higher T

IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:

4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025