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IXGX50N60AU1S Datasheet(PDF) 1 Page - IXYS Corporation |
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IXGX50N60AU1S Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 6 page © 1997 IXYS All rights reserved G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Test Conditions Maximum Ratings V CES T J = 25 °C to 150°C 600 V V CGR T J = 25 °C to 150°C; R GE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25 °C, limited by leads 75 A I C90 T C = 90 °C50 A I CM T C = 25 °C, 1 ms 200 A SSOA V GE = 15 V, TVJ = 125°C, RG = 10 Ω I CM = 100 A (RBSOA) Clamped inductive load, L = 30 µH @ 0.8 V CES P C T C = 25 °C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C Weight 6g Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s HiPerFASTTM V CES = 600 V IGBT with Diode I C25 = 75 A V CE(sat) = 2.7 V Combi Pack t fi = 275 ns Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. BV CES I C = 500 µA, V GE = 0 V 600 V V GE(th) I C = 500 µA, V CE = VGE 2.5 5.5 V I CES V CE = 0.8 • V CES T J = 25 °C 250 µA V GE = 0 V T J = 125°C15 mA I GES V CE = 0 V, V GE = ±20 V ±100 nA V CE(sat) I C = I C90, VGE = 15 V 2.7 V Features l Hole-less TO-247 for clip mount l High current capability l High frequency IGBT and anti- parallel FRED in one package l Low V CE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low I RM Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies Advantages l Space savings (two devices in one package) l Reduces assembly time and cost l High power density 97513 (5/97) IXGX50N60AU1 IXGX50N60AU1S TO-247 Hole-less (50N60AU1) G C C (TAB) E G C (TAB) TO-247 Hole-less SMD (50N60AU1S) Preliminary data |
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