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IXGX50N60AU1S Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXGX50N60AU1S
Description  HiPerFAST IGBT with Diode
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGX50N60AU1S Datasheet(HTML) 1 Page - IXYS Corporation

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© 1997 IXYS All rights reserved
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°C to 150°C
600
V
V
CGR
T
J
= 25
°C to 150°C; R
GE = 1 MΩ
600
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C = 25 °C, limited by leads
75
A
I
C90
T
C = 90 °C50
A
I
CM
T
C = 25 °C, 1 ms
200
A
SSOA
V
GE = 15 V, TVJ = 125°C, RG = 10 Ω
I
CM = 100
A
(RBSOA)
Clamped inductive load, L = 30
µH
@ 0.8 V
CES
P
C
T
C = 25 °C
300
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
Weight
6g
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
HiPerFASTTM
V
CES
= 600 V
IGBT with Diode
I
C25
=
75 A
V
CE(sat)
=
2.7 V
Combi Pack
t
fi
= 275 ns
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 500
µA, V
GE = 0 V
600
V
V
GE(th)
I
C
= 500
µA, V
CE = VGE
2.5
5.5
V
I
CES
V
CE
= 0.8 • V
CES
T
J =
25
°C
250
µA
V
GE
= 0 V
T
J = 125°C15
mA
I
GES
V
CE
= 0 V, V
GE = ±20 V
±100
nA
V
CE(sat)
I
C
= I
C90, VGE = 15 V
2.7
V
Features
l
Hole-less TO-247 for clip mount
l
High current capability
l
High frequency IGBT and anti-
parallel FRED in one package
l
Low V
CE(sat)
- for minimum on-state conduction
losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Reduces assembly time and cost
l
High power density
97513 (5/97)
IXGX50N60AU1
IXGX50N60AU1S
TO-247 Hole-less
(50N60AU1)
G
C
C (TAB)
E
G
C (TAB)
TO-247 Hole-less SMD
(50N60AU1S)
Preliminary data


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