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IXGH10N60U1 Datasheet(PDF) 4 Page - IXYS Corporation |
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IXGH10N60U1 Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 6 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXGH10N60U1 IXGH10N60AU1 Pulse Width - Seconds 10-5 10-4 10-3 10-2 10-1 100 0.01 0.10 1.00 D=0.1 D=0.2 I C = 10A V CE - Volts 0 100 200 300 400 500 600 0.01 0.1 1 10 100 V CE - Volts 0 5 10 15 20 25 0 100 200 300 400 500 600 700 800 C res C oes I G = 10mA V CE = 480V T J = 125 °C dV/dt < 3V/ns Single Pulse Total Gate Charge - (nC) 0 1020 304050 1 3 5 7 9 11 13 15 C ies f = 1MHz D=0.05 D=0.02 D=0.01 D=0.5 Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area Fig.10 Transient Thermal Impedance Fig.9 Capacitance Curves |
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Similar Description - IXGH10N60U1 |
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