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IXGH10N60U1 Datasheet(PDF) 4 Page - IXYS Corporation

Part # IXGH10N60U1
Description  Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGH10N60U1 Datasheet(HTML) 4 Page - IXYS Corporation

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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH10N60U1
IXGH10N60AU1
Pulse Width - Seconds
10-5
10-4
10-3
10-2
10-1
100
0.01
0.10
1.00
D=0.1
D=0.2
I
C = 10A
V
CE - Volts
0
100
200
300
400
500
600
0.01
0.1
1
10
100
V
CE - Volts
0
5
10
15
20
25
0
100
200
300
400
500
600
700
800
C
res
C
oes
I
G = 10mA
V
CE = 480V
T
J = 125 °C
dV/dt < 3V/ns
Single Pulse
Total Gate Charge - (nC)
0
1020
304050
1
3
5
7
9
11
13
15
C
ies
f = 1MHz
D=0.05
D=0.02
D=0.01
D=0.5
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
Fig.10 Transient Thermal Impedance
Fig.9 Capacitance Curves


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