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IXFH35N30 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFH35N30 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 4 page 1 - 4 © 2000 IXYS All rights reserved IXYS reserves the right to change limits, test conditions, and dimensions. Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 300 V V DGR T J = 25 °C to 150°C; R GS = 1 MW 300 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C 35N30 35 A 40N30 40 A I DM T C = 25 °C, pulse width limited by T JM 35N30 140 A 40N30 160 A I AR T C = 25 °C 35N30 35 A 40N30 40 A E AR T C = 25 °C30 mJ dv/dt I S £ I DM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns T J £ 150°C, RG = 2 W P D T C = 25 °C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 250 mA 300 V V GS(th) V DS = V GS, ID = 4 mA 2 4 V I GSS V GS = ±20 VDC, VDS = 0 ±100 nA I DSS V DS = 0.8 • V DSS T J = 25°C 200 mA V GS = 0 V T J = 125°C1 mA R DS(on) V GS = 10 V, ID = 0.5 ID25 35N30 0.100 W FH40N30 0.085 W FM40N30 0.088 W Pulse test, t £ 300 ms, duty cycle d £ 2 % HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t rr, HDMOS TM Family V DSS I D25 R DS(on) IXFH/IXFM35N30 300 V 35 A 100 m W IXFH40N30 300 V 40 A 85 m W IXFM40N30 300 V 40 A 88 m W t rr £ 200 ns TO-247 AD (IXFH) TO-204 AE (IXFM) D G Features • International standard packages • Low R DS (on) HDMOS TM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • Space savings • High power density G = Gate, D = Drain, S = Source, TAB = Drain 91523F (07/00) (TAB) |
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