MUN5115DW1T1 datasheet(2/20 Pages) ONSEMI

Part #	MUN5115DW1T1

Description	Dual Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5111DW1T1 Series

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DEVICE MARKING AND RESISTOR VALUES

Device

Package

Marking

R1 (K)

R2 (K)

Shipping

MUN5111DW1T1

SOT−363

0A

10

3000/Tape & Reel

MUN5112DW1T1

SOT−363

0B

22

3000/Tape & Reel

MUN5113DW1T1

SOT−363

0C

47

3000/Tape & Reel

MUN5114DW1T1

SOT−363

0D

10

47

3000/Tape & Reel

MUN5115DW1T1

SOT−363

0E

10

∞

3000/Tape & Reel

MUN5116DW1T1

SOT−363

0F

4.7

∞

3000/Tape & Reel

MUN5130DW1T1

SOT−363

0G

1.0

3000/Tape & Reel

MUN5131DW1T1

SOT−363

0H

2.2

3000/Tape & Reel

MUN5132DW1T1

SOT−363

0J

4.7

3000/Tape & Reel

MUN5133DW1T1

SOT−363

0K

4.7

47

3000/Tape & Reel

MUN5134DW1T1

SOT−363

0L

22

47

3000/Tape & Reel

MUN5135DW1T1

SOT−363

0M

2.2

47

3000/Tape & Reel

MUN5136DW1T1

SOT−363

0N

100

3000/Tape & Reel

MUN5137DW1T1

SOT−363

0P

47

22

3000/Tape & Reel

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = −50 V, IE = 0)

ICBO

−

−100

nAdc

Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0)

ICEO

−

−500

nAdc

Emitter-Base Cutoff Current

MUN5111DW1T1

(VEB = −6.0 V, IC = 0)

MUN5112DW1T1

MUN5113DW1T1

MUN5114DW1T1

MUN5115DW1T1

MUN5116DW1T1

MUN5130DW1T1

MUN5131DW1T1

MUN5132DW1T1

MUN5133DW1T1

MUN5134DW1T1

MUN5135DW1T1

MUN5136DW1T1

MUN5137DW1T1

IEBO

−

−0.5

−0.2

−0.1

−0.2

−0.9

−1.9

−4.3

−2.3

−1.5

−0.18

−0.13

−0.2

−0.05

−0.13

mAdc

Collector-Base Breakdown Voltage (IC = −10 µA, IE = 0)

V(BR)CBO

−50

−

Vdc

Collector-Emitter Breakdown Voltage (Note 3.) (IC = −2.0 mA, IB = 0)

V(BR)CEO

−50

−

Vdc

ON CHARACTERISTICS (Note 3.)

Collector-Emitter Saturation Voltage (IC = −10 mA, IE = −0.3 mA)

(IC = −10 mA, IB = −5 mA) MUN5130DW1T1/MUN5131DW1T1

(IC = −10 mA, IB = −1 mA) MUN5115DW1T1/MUN5116DW1T1

MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1

VCE(sat)

−

−0.25

Vdc

3. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

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