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DSDI60-18A Datasheet(PDF) 1 Page - IXYS Corporation |
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DSDI60-18A Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 1 page  © 2000 IXYS All rights reserved 1 - 1 DSDI 60 I FAVM = 63 A V RRM = 1400-1800 V t rr = 40 ns Features q International standard package JEDEC TO-247 AD q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low I RM-values q Soft recovery behaviour q Epoxy meets UL 94V-0 q Creepage distance between leads 8.5 mm Applications q Antiparallel diode for high frequency switching devices q Anti saturation diode q Snubber diode q Free wheeling diode in converters and motor control circuits q Rectifiers in switch mode power supplies (SMPS) q Inductive heating and melting q Uninterruptible power supplies (UPS) q Ultrasonic cleaners and welders Advantages q High reliability circuit operation q Low voltage peaks for reduced protection circuits q Low noise switching q Low losses q Operating at lower temperature or space saving by reduced cooling Dimensions See DSEI 60-12 on page D5 - 27 x I FAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions V RSM V RRM Type V V 1400 1400 DSDI 60-14A 1600 1600 DSDI 60-16A 1800 1800 DSDI 60-18A Symbol Test Conditions Maximum Ratings I FRMS T VJ = TVJM 100 A I FAVM ÿÿ x T C = 60°C; rectangular, d = 0.5 63 A I FRM t P < 10 ms; rep. rating, pulse width limited by TVJM 800 A I FSM T VJ = 45°C; t = 10 ms (50 Hz), sine 500 A t = 8.3 ms (60 Hz), sine 540 A T VJ = 150°C; t = 10 ms (50 Hz), sine 450 A t = 8.3 ms (60 Hz), sine 480 A I2t T VJ = 45°C t = 10 ms (50 Hz), sine 1250 A2s t = 8.3 ms (60 Hz), sine 1200 A2s T VJ = 150°C; t = 10 ms (50 Hz), sine 1000 A2s t = 8.3 ms (60 Hz), sine 950 A2s T VJ -40...+150 °C T VJM 150 °C T stg -40...+150 °C P tot T C = 25°C 416 W M d Mounting torque 0.8...1.2 Nm Weight 6g Symbol Test Conditions Characteristic Values typ. max. I R T VJ = 25°CVR = V RRM 12 mA T VJ = 25°CVR = 0.8 • V RRM 0.5 mA T VJ = 125°CVR = 0.8 • V RRM 3mA V F I F = 70 A; T VJ = 125 °C 2.6 V T VJ =25 °C 4.1 V V T0 For power-loss calculations only 1.9 V r T T VJ = TVJM 10 m W R thJC 0.4 K/W R thCK 0.25 K/W t rr I F = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C 40 ns t rr I F = 70 A; -di/dt = 500 A/ms; VR = 1000 V; 300 ns I RM T VJ = 25°C 60 A t rr I F = 70 A; -di/dt = 500 A/ms; VR = 1000 V; 400 ns I RM T VJ = 125°C 85 A Super Fast Recovery Diode A C TO-247 AD C C A A = Anode, C = Cathode Preliminary Data |
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