K4N51163QC-ZC2A datasheet(10/64 Pages) SAMSUNG

Part #	K4N51163QC-ZC2A

Description	512Mbit gDDR2 SDRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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10 / 64 page

- 10 -

Rev 1.5 Oct. 2005

512M gDDR2 SDRAM

K4N51163QC-ZC

Parameter

Symbol

- 36

-33

- 2A

- 25

Units

Min

Max

Min

Max

Min

Max

Min

Max

Input capacitance, CK and CK

CCK

1.0

2.0

1.0

2.0

1.0

2.0

1.0

2.0

pF

Input capacitance delta, CK and CK

CDCK

x

0.25

x

0.25

x

0.25

x

0.25

pF

Input capacitance, all other input-only pins

CI

1.0

2.0

1.0

2.0

1.0

2.0

1.0

1.75

pF

Input capacitance delta, all other input-only pins

CDI

x

0.25

x

0.25

x

0.25

x

0.25

pF

Input/output capacitance, DQ, DM, DQS, DQS

CIO

2.5

4.0

2.5

4.0

2.5

3.5

2.5

3.5

pF

Input/output capacitance delta, DQ, DM, DQS, DQS

CDIO

x

0.5

x

0.5

x

0.5

x

0.5

pF

9.0 Electrical Characteristics & AC Timing for - 25/2A/33/36

(0

°C < TCASE < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V)

SPEED

-25

- 2A

-33

- 36

Units

Bin (CL-tRCD-tRP)

5-5-5

4-4-4

Parameter

min

CAS LATENCY

5

4

tCK

2.5

2.86

3.3

3.6

ns

tRCD

5

4

tCK

tRP

5

4

tCK

tRC

21

18

15

tCK

tRAS

16

13

11

tCK

9.1 Refresh Parameters

Parameter

Symbol

512Mb

Units

Refresh to active/Refresh command time

tRFC

105

ns

Average periodic refresh interval

tREFI

0

°C ≤ TCASE ≤ 85°C

7.8

µs

85

°C < TCASE ≤ 95°C

3.9

µs

9.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS

8.9 Input/Output capacitance

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K4N51163QC-ZC2A Datasheet(PDF) 10 Page - Samsung semiconductor

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