2 / 5 page
N Channel MOSFET
M01N60
1.0A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(Ta=25℃)
*Pulse Test: Pulse Width ≦300μS, Duty Cycle ≦ 2%
**Negligible, Dominated by circuit inductance
PARAMETERS
SYMBO
L
MIN
TYP
MAX UNIT
CONDITION
Drain-Source Breakdown Voltage
V(BR)DSS
600
Vdc
VGS=0, ID=250uA
Drain-Source Leakage Current
IDSS
1.0
0.25
mA
mA
VDS=600V, VGS=0
VDS=480V, VGS=0, Tj=125℃
Gate-Source Leakage Current-
Forward
IGSSF
100
nA
VGSR=20V, VDS=0
Gate Threshhold Voltage
VGS(th)
2.0
4.0
V
VDS=VGS, ID=250uA
Drain-Source On-Resistance
RDS(on)
8
Ohm
VGS=10V, ID=0.6A*
Input Capacitance
Ciss
210
pF
Output Capacitance
Coss
28
pF
Reverse Transfer Capacitance
Crss
9
pF
VDS=25V, VGS=0, f=1 MHz
Turn-On Delay Time
ton
8
nS
Turn-Off Delay Time
toff
18
nS
VDS=300V, ID=1.0A,
Rise Time
tr
21
nS
Fall Time
tf
24
nS
VGS=10V, RG=18Ω
Total Gate Charge
Qg
8.5
nC
Gate-Drain Charge
Qgd
8.5
nC
VDS=400V, ID=1.0A
Gate-Drain Charge
Qgs
1.8
nC
VGS=10V*
Intemal Drain Inductance
LD
4.5
nH
Measured from the drain lead
0.25’’ From package to center
of die
Internal Drain Inductance
Ls
7.5
nH
Measured from the sorce lead
0.25’’ package to source bond
pad
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
VDS
1.5
V
Forward Tum Time
ton
**
nS
Reverse Recovery Time
trr
350
500
nS
Is=1.0A, VGS=0V
dIS/dt = 100A/μS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295