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AS29LV160 Datasheet(PDF) 3 Page - Alliance Semiconductor Corporation

Part # AS29LV160
Description  3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS29LV160 Datasheet(HTML) 3 Page - Alliance Semiconductor Corporation

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L = Low (<VIL) = logic 0; H = High (>VIH) = logic 1; VID = 10.0 ± 1.0V; X = don’t care.
In ×16 mode, BYTE = VIH. In ×8 mode, BYTE = VIL with DQ8-DQ14 in high Z and DQ15 = A-1.
Verification of sector protect/unprotect during A9 = V
ID.
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Mode
CE
OE
WE
A0
A1
A6
A9
RESET
DQ
ID read MFR code
LL
H
LLL
VID
HCode
ID read device code
L
L
H
H
L
L
VID
HCode
Read
L
L
H
A0A1
A6A9
H
DOUT
Standby
H
XXXXXX
H
High Z
Output disable
L
H
H
XXXX
H
High Z
Write
L
H
L
A0
A1
A6
A9
H
DIN
Enable sector protect
L
VID
Pulse/L
L
H
L
VID
HX
Sector unprotect
L
VID
Pulse/L
L
H
H
VID
HX
Temporary sector
unprotect
XXXXXXX
VID
X
Verify sector protect
L
L
HLHL
VID
HCode
Verify sector unprotect
LL
H
L
H
H
VID
HCode
Hardware Reset
XXXXXXX
L
High Z
Item
Description
ID MFR code,
device code
Selected by A9 = VID(9.5V–10.5V), CE = OE = A1 = A6 = L, enabling outputs.
When A0 is low (VIL) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products.
When A0 is high (VIH), DOUT represents the device code for the AS29LV160.
Read mode
Selected with CE = OE = L, WE = H. Data is valid in tACC time after addresses are stable, tCE after CE is low
and tOE after OE is low.
Standby
Selected with CE = H. Part is powered down, and ICC reduced to <1.0 µA when CE = VCC ± 0.3V = RESET. If
activated during an automated on-chip algorithm, the device completes the operation before entering
standby.
Output disable
Part remains powered up; but outputs tri-stated with OE pulled high.
Write
Selected with CE = WE = L, OE = H. Accomplish all Flash erasure and programming through the command
register. Contents of command register serve as inputs to the internal state machine. Address latching occurs
on the falling edge of WE or CE, whichever occurs later. Data latching occurs on the rising edge WE or CE,
whichever occurs first. Filters on WE prevent spurious noise events from appearing as write commands.
Enable
sector protect
Hardware protection circuitry implemented with external programming equipment causes the device to
disable program and erase operations for specified sectors. For in-system sector protection, refer to Sector
protect algorithm on page 15.
Sector unprotect
Disables sector protection for all sectors using external programming equipment. All sectors must be
protected prior to sector unprotection. For in-system sector unprotection, refer to Sector unprotect
algorithm on page 15.


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