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T431616C-7SG Datasheet(PDF) 1 Page - Taiwan Memory Technology |
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T431616C-7SG Datasheet(HTML) 1 Page - Taiwan Memory Technology |
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1 / 30 page  TE CH tm T431616C TM Technology Inc. reserves the right P. 1 Publication Date: AUG. 2004 to change products or specifications without notice. Revision: A SDRAM 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM FEATURES • 3.3V power supply • Clock cycle time : 6 / 7 ns • Dual banks operation • LVTTL compatible with multiplexed address • All inputs are sampled at the positive going edge of system clock • Burst Read Single-bit Write operation • DQM for masking • Auto refresh and self refresh • 32ms refresh period (2K cycle) • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) • Available package type : - 50 pin TSOP(II)/lead-free • Operating temperature : - 0 ~ +70 °C ORDERING INFORMATION GRNERAL DESCRIPTION The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle . Range of operating frequencies , programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth , high performance memory system applications. PART NO. CLOCK CYCLE TIME MAX FREQUENCY PACKAGE OPERATING TEMPERATURE T431616C-6S 6ns 166 MHz TSOP-II 0 ~ +70 °C T431616C-6SG 6ns 166 MHz TSOP-II Lead-free 0 ~ +70 °C T431616C-7S 7ns 143 MHz TSOP-II 0 ~ +70 °C T431616C-7SG 7ns 143 MHz TSOP-II Lead-free 0 ~ +70 °C |
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