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T436416C-6S Datasheet(PDF) 4 Page - Taiwan Memory Technology

Part # T436416C-6S
Description  4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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Manufacturer  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T436416C-6S Datasheet(HTML) 4 Page - Taiwan Memory Technology

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TE
CH
tm
T436416C
TM Technology Inc. reserves the right
P. 4
Publication Date: AUG. 2004
to change products or specifications without notice.
Revision: A
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative To Vss
VIN,VOUT
-1.0 to 4.6
V
Supply Voltage Relative To Vss
VDD,VDDQ
-1.0 to 4.6
V
Short circuit Output Current
Iout
50
mA
Power Dissipation
PD
1
W
Operating Temperature
TOPR
0 to +70
°C
Storage Temperature
Tstg
-55 to +150
°C
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA = 0 to +70
°°°°C, Voltage referenced to VSS=0V)
Parameter
Symbol
Min.
Typ
Max.
Unit
Notes
Supply Voltage
VDD,VDDQ
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
3.0
VDD+0.3V
V
1
Input Low Voltage
VIL
-0.3
0
0.8
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH=-2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL=2mA
Input leakage current
IIL
-5
-
5
uA
3
Output leakage current
IOL
-5
-
5
uA
4
Note : 1. VIH (max) = 4.6V AC for pulse width
10ns acceptable.
2. VIL (min) = -1.5V AC for pulse width
10ns acceptable.
3. Any input 0V
VIN VDD+ 0.3V , all other pin are not under test = 0V.
4. Dout = disable, 0V
VOUT VDD .
CAPACITANCE
(TA =25
°C,VDD=3.3V, f = 1MHz)
Pin
Symbol
Min
Max
Unit
CLOCK
CCLK
2.0
4.0
pF
ADDRESS
CADD
2.0
4.0
pF
DQ0 ~ DQ15
COUT
2.0
4.0
pF
RAS,CAS,WE,CS,CKE,LDQM,
UDQM
CIN
2.0
5.0
pF


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