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T63H0008A-AX Datasheet(PDF) 6 Page - Taiwan Memory Technology |
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T63H0008A-AX Datasheet(HTML) 6 Page - Taiwan Memory Technology |
6 / 20 page TE CH tm T63H0008A TM Technology, Inc. reserves the right P. 6 Publication Date: Dec. 2003 to change products or specifications without notice. Revision:A MEASUREMENT CIRCUITS Unless otherwise specified, the output voltage levels “H” and “L” at COUT and DOUT pins are judged by the threshold voltage (1.0V) of the N channel FET. Judge the COUT pin level with respect to V- and the DOUT pin level with respect to VSS. (1) Measurement Condition 1, Measurement Circuit 1 (Overcharge detection voltage, Overcharge hysteresis voltage). The overcharge detection voltage(VDET1) is defined by the voltage between VDD and VSS at which VCO goes “L” from “H” when the voltage V1 is gradually increased from the starting condition V1=3.5V and V2=0V. The overcharge hysteresis voltage (VHC T1) is then defined by the difference between the overcharge detection voltage (VDD) and the voltage between VDD and VSS at which VCOUT goes “H” from “L” when the voltage V1 is gradually decreased. (2) Measurement Condition 2, Measurement Circuit 2 (Over-discharge detection voltage, Over-discharge hysteresis voltage ) The over-discharge detection voltage (VDET2) is defined by the voltage between VDD and VSS at which VDO goes “L” from “H” when the voltage V1 is gradually decreased from the starting cond ition V1=3.5V and V2=0V. The over-discharge hysteresis voltage (VHDT2 ) is then defined by the difference between the over-discharge detection voltage (VDET2) and the voltage between VDD and VSS at which VDO goes “H” from “L” when the voltage V1 is gradually increased. (3) Measurement Condition 3, Measurement Circuit 2 (Over-current 1 detection voltage, Over-current 2 detection voltage, Load short-circuiting detection voltage) The over-current 1 detection voltage is defined by the voltage between V- and VSS whose delay time for changing VDO from “H” to “L” lies between the minimum and the maximum value of the over-current 1 detection delay time when the voltage V2 is increased rapidly within 10us from the starting condition V1=3.5V and V2=0V. The over-current 2 detection voltage is defined by the voltage between V- and VSS whose delay time for changing VDO from “H” to “L” lies between the minimum and the maximum value of the over-current 2 detection delay time when the voltage V2 is increased rapidly within 10us from the starting condition V1=3.5V and V2=0V. The load short-circuiting detection voltage is defined by the voltage between V- and VSS whose delay time for changing VDO from “H” to “L” lies between the minimum and the maximum value of the load short-circuiting detection delay time when the voltage V2 is increased rapidly within 10us from the starting condition V1=3.5V and V2=0V. |
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