TE

CH

tm

Preliminary T15V2M08A

Taiwan Memory Technology, Inc. reserves the right

P. 3

Publication Date: MAR. 2001

to change products or specifications without notice.

Revision:0.A

ABSOLUTE MAXIMUM RATINGS*

PARAMETER

SYM

MIN.

MAX.

UNIT

Voltage on Any Pin Relative to Gnd

-0.5

+4.6 V

V

Power Dissipation

-

0.7

W

Storage Temperature

-55

+150

°C

Temperature Under Bias

-40

+85

°C

*Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to

the device. This is a stress rating only and function operation of the device at these or any other

conditions outside those indicated in the operational sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

TRUTH TABLE

CE 1

CE2

WE

OE

DATA

MODE

H

X

X

X

High-Z

Standby

X

L

X

X

High-Z

Standby

L

H

H

L

Data Out

Active, Read

L

H

H

H

High-Z

Active, Output Disable

L

H

L

X

Data In

Acitve, Write

*Note: X = Don’t Care, L = Low, H = High