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MPSA20G Datasheet(PDF) 1 Page - ON Semiconductor |
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MPSA20G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 Publication Order Number: MPSA20/D MPSA20 Amplifier Transistor NPN Silicon Features • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 4.0 Vdc Collector Current − Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 W mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. RqJA is measured with the device soldered into a typical printed circuit board. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com Device Package Shipping MPSA20 TO−92 5,000 Units / Box MPSA20G TO−92 (Pb−Free) 5,000 Units / Box ORDERING INFORMATION COLLECTOR 3 2 BASE 1 EMITTER MPSA20 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) TO−92 CASE 29−11 STYLE 1 1 2 3 MARKING DIAGRAM MPS A20 AYWW G G |
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