© Semiconductor Components Industries, LLC, 2006

June, 2006 − Rev. 4

1

Publication Order Number:

MPS6601/D

MPS6601, MPS6602 (NPN)

MPS6651, MPS6652 (PNP)

MPS6602 and MPS6652 are Preferred Devices

Amplifier Transistors

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector −Emitter Voltage

MPS6601/6651

MPS6602/6652

25

40

Vdc

Collector −Base Voltage

MPS6601/6651

MPS6602/6652

25

30

Vdc

Emitter −Base Voltage

4.0

Vdc

Collector Current − Continuous

1000

mAdc

Derate above 25

°C

625

5.0

W

mW/

°C

Derate above 25

°C

1.5

12

W

mW/

°C

Operating and Storage Junction

Temperature Range

−55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

(Note 1)

200

°C/W

Thermal Resistance, Junction−to−Case

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

MPS66xy = Device Code

x = 0 or 5

y = 1 or 2

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

Preferred devices are recommended choices for future use

and best overall value.

TO−92

CASE 29−11

STYLE 1

1

2

3

MARKING DIAGRAM

MPS

66xy

AYWW

G

G

COLLECTOR

3

2

BASE

1

EMITTER

COLLECTOR

3

2

BASE

1

EMITTER

NPN

PNP

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION