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IC62LV2568L Datasheet(PDF) 3 Page - Integrated Circuit Solution Inc

Part No. IC62LV2568L
Description  256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM
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Maker  ICSI [Integrated Circuit Solution Inc]
Homepage  http://www.icsi.com.tw
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 3 page
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Integrated Circuit Solution Inc.
3
LPSR001-0A 05/01/2001
IC62LV2568L
IC62LV2568LL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to Vcc + 0.5
V
VCC
Vcc related to GND
–0.3 to +4.0
V
TBIAS
Temperature Under Bias
–40 to +85
°C
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
0.7
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
p.
COUT
Output Capacitance
VOUT = 0V
8
p.
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –1.0 mA
2.2
—
V
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
—
0.4
V
VIH
Input HIGH Voltage
2.2
VCC + 0.3
V
VIL(1)
Input LOW Voltage(1)
–0.3
0.4
V
ILI
Input Leakage
GND ≤ VIN ≤ VCC
–1
1
µA
ILO
Output Leakage
GND ≤ VOUT ≤ VCC
–1
1
µA
Notes:
1. VIL = –2.0V for pulse width less than 10 ns.
TRUTH TABLE
Mode
WE
WE
WE
WE
WE
CE1
CE1
CE1
CE1
CE1
CE2
OE
OE
OE
OE
OE
I/O Operation
Vcc Current
Not Selected
X
H
X
X
High-Z
ISB, ISB
(Power-down)
X
X
L
X
High-Z
ISB, ISB
Output Disabled
H
L
H
H
High-Z
ICC
Read
HL
HL
DOUT
ICC
Write
L
L
H
X
DIN
ICC




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