MPS6725 datasheet(3/5 Pages) ONSEMI

Part #	MPS6725

Description	One Watt Darlington Transistors NPN Silicon

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MPS6724, MPS6725

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3

500

5.0

IC, COLLECTOR CURRENT (mA)

200 k

100 k

70 k

IB, BASE CURRENT (mA)

5.0

50

2.0

1.0

0.5

50 k

20 k

30

10

20

100

200

10 20

0.5 1.0 2.0

1.5

2.5

3.0

0.1 0.2

100

TJ = 125°C

TJ = 25°C

IC =

50 mA

IC =

10 mA

IC =

500 mA

IC =

250 mA

Figure 2. DC Current Gain

Figure 3. Collector Saturation Region

7.0

70

50

300

10 k

7.0 k

5.0 k

2.0 k

30 k

3.0 k

VCE = 5.0 V

−55°C

25°C

500

200

1000

1.0

5.0

0.5

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.8

0.6

0.2

VR, REVERSE VOLTAGE (VOLTS)

0.04

10

20

7.0

5.0

2.0

10

500

20

4.0

0.1

40

1.0

3.0

TJ = 25°C

Cobo

Cibo

VCE = 5.0 V

TJ = 25°C

f = 100 MHz

100

500

IC, COLLECTOR CURRENT (mA)

0.6

1.6

1.4

1.2

1.0

0.8

IC, COLLECTOR CURRENT (mA)

−1.0

−2.0

−3.0

−4.0

−5.0

−6.0

200

5.0

10

20

50

TJ = 25°C

100

500

5.0

200

7.0 10

20

50

qVB FOR VBE

VCE(sat) @ IC/IB = 1000

VBE(on) @ VCE = 5.0 V

Figure 4. “ON” Voltages

Figure 5. Temperature Coefficients

Figure 6. High Frequency Current Gain

Figure 7. Capacitance

VBE(sat) @ IC/IB = 1000

7.0

300

30

70

300

30

70

*qVC FOR VCE(sat)

25°C TO 125°C

−55°C TO 25°C

25°C TO 125°C

−55°C TO 25°C

*APPLIES FOR IC/IB ≤ hFE/3.0

0.2

0.4

2.0

4.0

20

10

0.4

50

100 200

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